English to French Tech/Engineering Electronics / Elect Eng MOSFET, source region , collector, current, substrate

high power wide band-gap MOSFET-gated bipolar junction transistors ("MGT") are provided. These MGTs include a first wide band-gap SiC.
bipolar junction transistor ("BJT") having a first collector, a first emitter and a first base, a wide band-gap SiC MOSFET having a source région that is configured to provide a current to the base of the first wide band-gap BJT so that the first SiC BJT and the SiC MOSFET are connected in Darlington configuration, and a second wide band-gap BJT having a second collector, a second emitter and a second base. The second collector is electrically connected to the first collector, the second emitter is electrically connected to the first emitter,
and the second base is electrically connected to the first base. The second base is thinner than the first base.

Devices embodying a combination of bipolar current conduction with MOS-controlled current flow are also known. One example of such a device is the Insulated Gate Bipolar Transistor ("IGBT"), which is a device that combines the high impédance gâte of the power MOSFET with the small on-state conduction losses of the power BJT. Another device that combines MOSFET and BJT is the MOSFET Gated Transistor ("MGT"). An MGT may be implemented, for example, as a Darlington pair of discrete high voltage n-channel MOSFET at the input and a discrete BJT at the output. The MOSFET supplies the base current of the BJT while presenting minimal load to external drive circuits. The MGT may combine the high température, high current density switching characteristics of the BJT with the minimal drive requirement of the MOSFET.